Gallium Sulfide (GaS), identified by CAS Number 12024-10-1, stands as a prominent post-transition metal chalcogenide, recognized for its distinctive layered structure and remarkable semiconducting properties. This chemical compound of gallium and sulfur is characterized by its yellow crystalline appearance and a molecular weight of 101.788 g/mol, making it a subject of intense research and development across various high-tech industries.

At its core, GaS boasts a hexagonal layer structure, where each individual layer comprises covalently-bonded S−Ga−Ga−S stacks. Within these stacks, sheets of sulfur ions reside at the top and bottom, encapsulating two sheets of gallium ions in the middle. The strong covalent bonding within these individual layers contrasts with the weak van der Waals forces that bind adjacent layers along the c-axis. This unique anisotropic bonding facilitates exfoliation into ultra-thin, two-dimensional (2D) nanosheets, a property critical for emerging material science applications. Both alpha (α-GaS) and beta (β-GaS) phases exhibit this hexagonal arrangement, with the β-GaS being the energetically more favorable polytype.

One of the most compelling features of Gallium Sulfide is its electronic band structure. Bulk GaS exhibits an indirect bandgap of approximately 2.59 eV, with a direct gap around 3.05 eV. Interestingly, 2D GaS thin films can possess a larger bandgap than their bulk counterparts, with potential increases exceeding 3.0 eV due to quantum confinement effects. This characteristic positions 2D GaS as a valuable material for bridging the gap between small-band-gap semiconductors and insulators, opening new avenues for electronic device design.

The versatility of Gallium Sulfide translates into a broad spectrum of advanced applications. Its semiconducting nature makes it ideal for the development of next-generation electronic and optoelectronic devices, including high-performance transistors and UV light-emitting diodes (LEDs). GaS is also a prime candidate for photodetectors, particularly UV-selective photoelectrochemical-type detectors, crucial for medical diagnostics, air purification, and chemical analysis. In the realm of renewable energy, Gallium Sulfide has shown promise in solar cells and tandem solar photoelectrochemical cells, contributing to efficient solar energy conversion. Furthermore, its catalytic activity makes it valuable for hydrogen evolution reactions, while its non-linear optical properties, such as second-harmonic generation and two-photon excited fluorescence, are being explored for advanced optical communication systems and non-linear optics.

The preparation of high-purity Gallium Sulfide materials is essential for these demanding applications. At NINGBO INNO PHARMCHEM CO.,LTD., we understand the critical importance of material quality. Whether you require high-purity gallium sulfide powder or meticulously grown crystals, these forms are suitable for various synthesis methods, including liquid exfoliation and chemical vapor deposition, to produce high-quality GaS nanosheets and nanoparticles. As a dedicated chemical manufacturer and supplier, we ensure that our Gallium Sulfide products meet stringent purity standards, typically exceeding 99.995% for powder and 99.999% for crystals. For those looking to buy or purchase Gallium Sulfide, competitive price options are available for different quantities and forms to support both research and industrial-scale requirements.