Navigating the complex landscape of photoresist materials requires a deep understanding of their specifications and how they translate into real-world performance. LB-100, a highly regarded non-chemically amplified photoresist, is a prime example of material innovation designed to meet the stringent demands of modern nanolithography. For R&D scientists and procurement specialists, grasping these technical details is vital when considering a purchase. As a leading manufacturer, we aim to provide clarity on these critical aspects.

The core specification of LB-100 is its capability to achieve high resolution, with demonstrated patterning of features as small as 34 nm. This is largely attributed to its design as a negative-tone, non-chemically amplified resist. Unlike CARs, LB-100's intrinsic sensitivity minimizes the diffusion of reactive species, leading to sharper edges and reduced line-edge roughness. This inherent stability is a significant advantage for anyone looking to buy LB-100 for precision applications.

Another key specification is LB-100’s excellent etch resistance. The article notes an etch ratio of 7.2:1 with respect to silicon, which is considerably higher than many conventional organic photoresists. This property is critical for the pattern transfer stage in semiconductor fabrication, ensuring that the delicate patterns created by lithography can withstand subsequent etching processes without degradation. This makes LB-100 a reliable choice for manufacturers.

The material’s application in EUV lithography, complex nanofeature patterning, and its characterization via FESEM and AFM further underscore its technical merits. For those interested in sourcing LB-100, understanding these specifications highlights its suitability for advanced microelectronic fabrication. We, as a manufacturer and supplier, offer comprehensive technical data and support to help you integrate LB-100 effectively into your processes. Contact us today to discuss pricing and availability for your nanolithography needs.