Patterning Highly Ordered Arrays of Complex Nanofeatures with LB-100 Photoresist

Discover the cutting-edge capabilities of LB-100, a non-chemically amplified photoresist designed for advanced EUV lithography. Achieve superior resolution and pattern transfer for your microelectronic needs. Contact us for a quote and sample.

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Key Advantages of LB-100

Precision Nanofabrication

Our LB-100 photoresist enables the precise patterning of complex nanofeatures, essential for high-density data storage and advanced electronic devices. Explore bulk purchase options from our dedicated manufacturer.

Simplified Processing

As a non-chemically amplified resist, LB-100 offers a more streamlined and robust process compared to traditional chemically amplified resists, reducing post-exposure bake sensitivity and potential line-edge roughness issues.

Cost-Effective Solution

We are a competitive supplier of LB-100, offering attractive pricing for bulk orders. Contact us for a detailed quote and to discuss how our materials can optimize your production costs.

Applications of LB-100

EUV Lithography

Ideal for Extreme Ultraviolet (EUV) lithography, LB-100 facilitates the creation of ultrafine nanofeatures critical for advanced semiconductor nodes. Inquire about current LB-100 pricing.

Microelectronics Manufacturing

A key material for producing integrated circuits, micro-lens arrays, and other microelectronic components requiring high-resolution patterning.

Photonic Crystals

Used in the fabrication of photonic crystals and advanced optical devices that rely on precise nanostructure patterning.

Information Storage

Contributes to the development of next-generation high-density information storage media by enabling the patterning of extremely small data bits.